5秒后页面跳转
捷配首页

Datasheet > JANSG2N7467U2
JANSG2N7467U2 PDF预览

JANSG2N7467U2

更新时间： 2024-01-26 15:25:12
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET

阅读下载

中文翻译

获取价格

JANSG2N7467U2 数据手册

 浏览型号JANSG2N7467U2的Datasheet PDF文件第2页浏览型号JANSG2N7467U2的Datasheet PDF文件第3页浏览型号JANSG2N7467U2的Datasheet PDF文件第4页浏览型号JANSG2N7467U2的Datasheet PDF文件第5页浏览型号JANSG2N7467U2的Datasheet PDF文件第6页浏览型号JANSG2N7467U2的Datasheet PDF文件第7页 
                                                                            
ꢁ
PD - 91787H  
IRHNA57Z60  
JANSR2N7467U2  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
REF: MIL5-PRF-19500/683  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNA57Z60 100K Rads (Si) 0.0035Ω 75A* JANSR2N7467U2  
IRHNA53Z60 300K Rads (Si) 0.0035Ω 75A* JANSF2N7467U2  
IRHNA54Z60 500K Rads (Si) 0.0035Ω 75A* JANSG2N7467U2  
IRHNA58Z60 1000K Rads (Si) 0.0040Ω 75A* JANSH2N7467U2  
SMD-2  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
75*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
75*  
300  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
0.83  
-55 to 150  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/24/06  
12345678

中文翻译

下载PDF

与JANSG2N7467U2相关器件

型号 品牌 描述 获取价格 数据表
JANSG2N7469U2 INFINEON Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si)

获取价格
JANSG2N7469U2A INFINEON Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500

获取价格
JANSG2N7470T1 INFINEON RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

获取价格
JANSG2N7470T1PBF INFINEON Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me

获取价格
JANSG2N7471T1 INFINEON Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254

获取价格
JANSG2N7479U3 INFINEON Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta

获取价格
JANSG2N7480U3 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

获取价格
JANSG2N7481U3 INFINEON Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad

获取价格
JANSG2N7482T3 INFINEON RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

获取价格
JANSG2N7484T3 INFINEON Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr

获取价格
JANSG2N7491T2 INFINEON RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

获取价格
JANSG2N7492T2 INFINEON RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

获取价格
JANSG2N7493T2 INFINEON Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M

获取价格
JANSG2N7494U5 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

获取价格
JANSG2N7495U5 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

获取价格
JANSG2N7520U3C INFINEON Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25

获取价格
JANSH2N2221AL MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

获取价格
JANSH2N2221AUA MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

获取价格
JANSH2N2221AUB MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

获取价格
JANSH2N2221AUBC MICROSEMI Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

获取价格

与JANSG2N7467U2相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证