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JANSG2N7467U2 PDF预览

JANSG2N7467U2

更新时间: 2024-11-05 03:05:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET

JANSG2N7467U2 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:CHIP CARRIER, R-CBCC-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified参考标准:MIL-19500/683
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSG2N7467U2 数据手册

 浏览型号JANSG2N7467U2的Datasheet PDF文件第2页浏览型号JANSG2N7467U2的Datasheet PDF文件第3页浏览型号JANSG2N7467U2的Datasheet PDF文件第4页浏览型号JANSG2N7467U2的Datasheet PDF文件第5页浏览型号JANSG2N7467U2的Datasheet PDF文件第6页浏览型号JANSG2N7467U2的Datasheet PDF文件第7页 
                                                                            
PD - 91787H  
IRHNA57Z60  
JANSR2N7467U2  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
REF: MIL5-PRF-19500/683  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNA57Z60 100K Rads (Si) 0.003575A* JANSR2N7467U2  
IRHNA53Z60 300K Rads (Si) 0.003575A* JANSF2N7467U2  
IRHNA54Z60 500K Rads (Si) 0.003575A* JANSG2N7467U2  
IRHNA58Z60 1000K Rads (Si) 0.004075A* JANSH2N7467U2  
SMD-2  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
75*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
75*  
300  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
0.83  
-55 to 150  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/24/06  

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