是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0035 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/683 |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7469U2 | INFINEON |
获取价格 |
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) | |
JANSG2N7469U2A | INFINEON |
获取价格 |
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500 | |
JANSG2N7470T1 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
JANSG2N7470T1PBF | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
JANSG2N7471T1 | INFINEON |
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Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254 | |
JANSG2N7479U3 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSG2N7480U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSG2N7481U3 | INFINEON |
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Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad | |
JANSG2N7482T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSG2N7484T3 | INFINEON |
获取价格 |
Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr |