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IXGT24N60CD1 PDF预览

IXGT24N60CD1

更新时间: 2024-11-17 21:54:03
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
5页 105K
描述
HiPerFAST IGBT with Diode Lightspeed Series

IXGT24N60CD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-268AA
包装说明:D3PAK-3针数:3
Reach Compliance Code:compliant风险等级:5.68
其他特性:FAST外壳连接:COLLECTOR
最大集电极电流 (IC):48 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):110 ns
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):130 ns
标称接通时间 (ton):15 nsBase Number Matches:1

IXGT24N60CD1 数据手册

 浏览型号IXGT24N60CD1的Datasheet PDF文件第2页浏览型号IXGT24N60CD1的Datasheet PDF文件第3页浏览型号IXGT24N60CD1的Datasheet PDF文件第4页浏览型号IXGT24N60CD1的Datasheet PDF文件第5页 
HiPerFASTTM IGBT  
with Diode  
LightspeedSeries  
IXGH 24N60CD1 VCES  
IXGT 24N60CD1 IC25  
= 600 V  
= 48 A  
VCE(sat) = 2.5 V  
Preliminary data  
TO-268  
(IXGT)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGE = 1 MW  
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
48  
24  
80  
A
A
A
TO-247 AD  
(IXGH)  
TC = 110°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 100 mH  
ICM = 48  
@ 0.8 VCES  
A
G
C
E
PC  
TC = 25°C  
150  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Internationalstandardpackages  
JEDEC TO-247 and surface  
mountableTO-268  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
• High frequency IGBT  
Weight  
TO-247  
TO-268  
6
4
g
g
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
- drive simplicity  
• Fast recovery expitaxial Diode (FRED)  
- soft recovery with low IRM  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• PFC circuits  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
IC = 750 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
VGE(th)  
ICES  
5.5  
V
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200  
3
mA  
mA  
Advantages  
• High power density  
• Very fast switching speeds for high  
frequencyapplications  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC110, VGE = 15 V  
2.1  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98603A(4/99)  
1 - 5  

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