Datasheet > IXGT30N120B3D1

IXGT30N120B3D1

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	241K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGT30N120B3D1 数据手册

GenX3^TM1200V IGBT

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 1200V

= 30A

≤£ 3.5V

= 204ns

IXGH30N120B3D1

IXGT30N120B3D1

High speed Low Vsat PT

IGBTs 3-20 kHz switching

Symbol

Test Conditions

Maximum Ratings

TO-247 AD (IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

I_C110

Continuous

±20

±30

Transient

T_C= 110°C

C (TAB)

I_F110

T_C= 110°C

I_CM

T_C= 25°C, 1ms

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

Clamped inductive load

T_C= 25°C

150

TO-268 (IXGT)

SSOA

(RBSOA)

P_C

I_CM= 60

@ 0.8 • V_CE

300

T_J

-55 ... +150

150

°C

C (TAB)

T_JM

T_stg

G = Gate

E = Emitter

= Collector

TAB = Collector

-55 ... +150

M_d

Mounting torque (TO-247)

1.13 / 10

300

Nm/lb.in.

°C

T_L

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

T_SOLD

Weight

260

°C

Features

TO-247

TO-268

^zOptimized for low conduction and

switching losses

^zSquare RBSOA

^zAnti-parallel ultra fast diode

^zInternational standard packages

Advantages

Symbol

Test Conditions

Characteristic Values

^zHigh power density

^zLow gate drive requirement

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

Applications

V_CE= V_CES

V_GE= 0V

300

1.5 mA

μA

^zPower Inverters

^zUPS

T_J= 125°C

^zMotor Drives

^zSMPS

I_GES

V_CE= 0V, V_GE= ±20V

±100

3.5

^zPFC Circuits

^zWelding Machines

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

T_J= 125°C

2.96

2.95

DS99566A(05/08)

12 3 4 5 6 7 8

中文翻译

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