Datasheet > IXGT30N120B3D1

IXGT30N120B3D1

更新时间： 2024-01-03 09:50:04

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	241K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGT30N120B3D1 数据手册

GenX3^TM1200V IGBT

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 1200V

= 30A

≤£ 3.5V

= 204ns

IXGH30N120B3D1

IXGT30N120B3D1

High speed Low Vsat PT

IGBTs 3-20 kHz switching

Symbol

Test Conditions

Maximum Ratings

TO-247 AD (IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

I_C110

Continuous

±20

±30

Transient

T_C= 110°C

C (TAB)

I_F110

T_C= 110°C

I_CM

T_C= 25°C, 1ms

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

Clamped inductive load

T_C= 25°C

150

TO-268 (IXGT)

SSOA

(RBSOA)

P_C

I_CM= 60

@ 0.8 • V_CE

300

T_J

-55 ... +150

150

°C

C (TAB)

T_JM

T_stg

G = Gate

E = Emitter

= Collector

TAB = Collector

-55 ... +150

M_d

Mounting torque (TO-247)

1.13 / 10

300

Nm/lb.in.

°C

T_L

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

T_SOLD

Weight

260

°C

Features

TO-247

TO-268

^zOptimized for low conduction and

switching losses

^zSquare RBSOA

^zAnti-parallel ultra fast diode

^zInternational standard packages

Advantages

Symbol

Test Conditions

Characteristic Values

^zHigh power density

^zLow gate drive requirement

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

Applications

V_CE= V_CES

V_GE= 0V

300

1.5 mA

μA

^zPower Inverters

^zUPS

T_J= 125°C

^zMotor Drives

^zSMPS

I_GES

V_CE= 0V, V_GE= ±20V

±100

3.5

^zPFC Circuits

^zWelding Machines

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

T_J= 125°C

2.96

2.95

DS99566A(05/08)

12 3 4 5 6 7 8

中文翻译

下载PDF

与IXGT30N120B3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGT30N60B	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-268
IXGT30N60B2	IXYS	获取价格	HiPerFAST IGBT
IXGT30N60B2D1	IXYS	获取价格	HiPerFAST IGBT
IXGT30N60BD1	IXYS	获取价格	HiPerFASTTM IGBT with Diode
IXGT30N60BU1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGT30N60C2	IXYS	获取价格	HiPerFAST IGBT
IXGT30N60C2D1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGT30N60C3D1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGT30N60C3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGT31N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT