Datasheet > IXGT28N30A

IXGT28N30A

更新时间： 2024-09-30 23:14:07

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	55K
描述
HiPerFAST IGBT

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中文翻译

获取价格

数据手册

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IXGT28N30A 数据手册

HiPerFAST^TMIGBT

IXGH 28N30A

IXGT 28N30A

V_CES

I_C25

= 300 V

56 A

V_CE(sat)typ= 1.85 V

t_fi(typ)= 120 ns

Preliminary data

TO-247 AD (IXGH)

Symbol

TestConditions

MaximumRatings

V_CES

V_CGR

T_J= 25°C to 150°C

300

T_J= 25°C to 150°C; R_GE= 1 MW

(TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-268

(IXGT)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

112

(TAB)

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 10 W

Clamped inductive load, L = 100 mH

I_CM= 56

@ 0.8 V_CES

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

P_C

T_C= 25°C

150

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• Internationalstandardpackages

JEDEC TO-247 SMD surface

mountable and JEDEC TO-247 AD

• Highcurrenthandlingcapability

• Newest generation HDMOS^TM

process

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

300

260

°C

M_d

Mountingtorque(M3)

1.13/10 Nm/lb.in.

• MOS Gate turn-on

- drive simplicity

Weight

TO-247 AD

TO-268

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

BV_CES

V_GE(th)

I_C= 250 mA, V_GE= 0 V

I_C= 250 mA, V_CE= V_GE

300

2.5

Advantages

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

200

• High power density

• Suitableforsurfacemounting

• Switching speed for high frequency

applications

• Easy to mount with 1 screw,

(isolatedmountingscrewhole)

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

V_CE(sat)

I_C= I_C90, V_GE= 15 V

1.85

2.1

IXYS reserves the right to change limits, test conditions, and dimensions.

97529A(9/98)

1 - 2

中文翻译

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