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IXGT28N30A PDF预览

IXGT28N30A

更新时间: 2024-11-04 23:14:07
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 55K
描述
HiPerFAST IGBT

IXGT28N30A 数据手册

 浏览型号IXGT28N30A的Datasheet PDF文件第2页 
HiPerFASTTM IGBT  
IXGH 28N30A  
IXGT 28N30A  
VCES  
IC25  
= 300 V  
56 A  
=
VCE(sat)typ = 1.85 V  
tfi(typ) = 120 ns  
Preliminary data  
TO-247 AD (IXGH)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
G
C
TJ = 25°C to 150°C; RGE = 1 MW  
V
(TAB)  
E
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268  
(IXGT)  
IC25  
IC90  
ICM  
TC = 25°C  
56  
28  
A
A
A
TC = 90°C  
G
TC = 25°C, 1 ms  
112  
(TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 100 mH  
ICM = 56  
@ 0.8 VCES  
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
• Internationalstandardpackages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
• Highcurrenthandlingcapability  
• Newest generation HDMOSTM  
process  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
260  
°C  
°C  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
• MOS Gate turn-on  
- drive simplicity  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
300  
2.5  
V
V
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
mA  
mA  
• High power density  
• Suitableforsurfacemounting  
• Switching speed for high frequency  
applications  
• Easy to mount with 1 screw,  
(isolatedmountingscrewhole)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
1.85  
2.1  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97529A(9/98)  
1 - 2  

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