Datasheet > IXGT32N60BD1

IXGT32N60BD1

更新时间： 2024-11-04 22:07:03

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
2页	72K
描述
HiPerFAST IGBTwith Diode

阅读下载

中文翻译

获取价格

数据手册

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IXGT32N60BD1 数据手册

HiPerFAST^TMIGBT

with Diode

= 600 V

IXGH 32N60BD1

IXGT 32N60BD1

CES

= 60 A

= 2.3 V

C25

t ^CE(sat)= 85 ns

fi(typ)

Symbol

TestConditions

Maximum Ratings

TO-268

(IXGT)

V_CES

V_CGR

= 25°C to 150°C

600

(TAB)

= 25°C to 150°C; R = 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-247 AD

(IXGH)

I_C25

I_C90

I_CM

= 25°C

= 90°C

= 25°C, 1 ms

120

(TAB)

SSOA

(RBSOA)

V = 15 V, T = 125°C, R = 22 Ω

I = 64

Clamped inductive load, L = 100 µH

= 25°C

@ 0.8 V

CES

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

P_C

200

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

• Internationalstandardpackages

• HighfrequencyIGBTandantiparallel

FREDinonepackage

-55 ... +150

M_d

Mounting torque (M3) TO-247AD

1.13/10 Nm/lb.in.

• Highcurrenthandlingcapability

• HiPerFAST HDMOS process

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• MOS Gate turn-on

-drivesimplicity

Weight

TO-247AD

TO-268

Applications

• Uninterruptible power supplies (UPS)

• Switched-modeandresonant-mode

power supplies

• AC motor speed control

Symbol

TestConditions

Characteristic Values

• DC servo and robot drives

• DC choppers

(T = 25°C, unless otherwise specified)

min. typ. max.

Advantages

BV_CES

V_GE(th)

= 250 µA, V = 0 V

600

2.5

• Space savings (two devices in one

package)

= 250 µA, V = V

5.0

I_CES

= 0.8 V

= 0 V

T = 25°C

200 µA

CES

• High power density

• Suitableforsurfacemounting

T = 150°C

I_GES

= 0 V, V = ±20 V

±100 nA

2.3

• Verylowswitchinglossesforhigh

frequencyapplications

V_CE(sat)

= I , V = 15 V

C90

• Easy to mount with 1 screw,TO-247

(insulated mountingscrewhole)

98749B (03/02)

中文翻译

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