Datasheet > IXGT28N60B

IXGT28N60B

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	592K
描述
Low V IGBT

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中文翻译

获取价格

数据手册
替代型号

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IXGT28N60B 数据手册

Low V_CE(sat)IGBT

V_CES

I_C25

= 600 V

= 40 A

IXGH 28N60B

IXGT 28N60B

V_CE(sat)= 2.0 V

Symbol

TestConditions

Maximum Ratings

TO-268

(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

C (TAB)

V_GES

V_GEM

Continuous

Transient

TO-247 AD

(IXGH)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

C (TAB)

SSOA

(RBSOA)

= 15 V, T_VJ= 125°C, R_G= 10 Ω

= 56

C^Gla^Emped inductive load

@ 0^C.8^MV_CES

150

P_C

T_C= 25°C

G = Gate,

E=Emitter,

C = Collector,

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

M_d

Mounting torque (M3) TO-247

1.13/10 Nm/lb.in.

International standard packages

Low V_CE(sat)

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- for minimum on-state conduction

Weight

TO-247

TO-268

losses

High current handling capability

MOS Gate turn-on

- drive simplicity

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.5

V_CE= V

T = 25°C

100 µA

500 µA

Advantages

Easy to mount with 1 screw

V_GE= 0 ^CV^ES

T_J^J= 125°C

(isolated mounting screw hole)

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= I_C90, V_GE= 15 V

100 nA

Low losses, high efficiency

High power density

V_CE(sat)

2.0

DS98570A(08/03)

12 3 4 5

中文翻译

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IXGT28N60B 替代型号

型号	品牌	替代类型	描述	数据表
IXGT30N120B3D1	IXYS	功能相似	GenX3 1200V IGBT

与IXGT28N60B相关器件

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