IXGT30N60BD1

更新时间： 2024-02-26 20:35:51

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
5页	116K
描述
HiPerFASTTM IGBT with Diode

阅读下载

中文翻译

获取价格

数据手册

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IXGT30N60BD1 数据手册

HiPerFAST^TMIGBT

with Diode

V_CES

= 600 V

IXGH 30N60BD1

IXGT 30N60BD1

I_C25

V_CE(sat)

60 A

1.8 V

t_fi(typ)

= 100 ns

Symbol

TestConditions

MaximumRatings

TO-268

(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-247 AD

(IXGH)

T_C= 90°C

T_C= 25°C, 1 ms

120

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 10 W

Clamped inductive load, L = 100 mH

I_CM= 60

@ 0.8 V_CES

C (TAB)

P_C

T_C= 25°C

200

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• Internationalstandardpackage

• ModeratefrequencyIGBTand

antiparallelFREDinonepackage

• Highcurrenthandlingcapability

• NewestgenerationHDMOS^TM

process

MaximumLeadandTabtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

M_d

Mountingtorque, TO-247AD

1.13/10

Nm/lb.in.

Weight

TO-247 AD

TO-268

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

BV_CES

V_GE(th)

I_C= 250mA, V_GE= 0 V

I_C= 250 mA, V_CE= V_GE

600

2.5

5.0

Advantages

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 150°C

200

• Space savings (two devices in one

package)

• High power density

• Optimized V_ce(sat)and switching

speedsformediumfrequency

application

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

V_CE(sat)

I_C= I_C90, V_GE= 15 V

1.8

IXYS reserves the right to change limits, test conditions, and dimensions.

98510C(7/00)

1 - 5

12 3 4 5

中文翻译

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