HiPerFASTTM IGBT
IXGH39N60B
IXGH39N60BD1 IC25
IXGT39N60B
IXGT39N60BD1 tfi
VCES
= 600 V
= 76 A
VCE(sat) = 1.7 V
= 200 ns
Preliminarydata
(D1)
TO-268
(IXGT)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
G
E
C (TAB)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-247 AD
(IXGH)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
76
39
152
A
A
A
C (TAB)
G
C
SSOA
V
= 15 V, TVJ = 125°C, RG = 22 Ω
I
= 76
A
CGlaE mped inductive load
@ 0C.8M VCES
200
E
(RBSOA)
G = Gate,
C = Collector,
TAB = Collector
E = Emitter,
PC
TC = 25°C
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard packages
JEDEC TO-247 AD & TO-268
High current handling capability
Newest generation HDMOSTM process
MOS Gate turn-on
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
z
z
Md
Mounting torque (M3)
TO-247
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
- drive simplicity
Applications
z
PFC circuits
Symbol
TestConditions
Characteristic Values
z
AC motor speed control
(TJ = 25°C, unless otherwise specified)
z
DC servo and robot drives
Min. Typ. Max.
z
DC choppers
z
BVCES
VGE(th)
ICES
I
= 250 µA, VGE = 0 V
39N60B
600
600
V
Uninterruptible power supplies (UPS)
ICC = 750 µA
39N60BD1
z
Switched-mode and resonant-mode
power supplies
I
= 250 µA, VCE = VGE
39N60B
2.5
5.0
5.0
V
V
ICC = 500 µA
39N60BD1 2.5
Advantages
VCE = 0.8 • VCES TJ = 25°C
39N60B
200 µA
z
High power density
VGE = 0 V
TJ = 125°C
TJ = 125°C
39N60B
1
3
mA
mA
z
Very fast switching speeds for high
39N60BD1
frequency applications
IGES
VCE = 0 V, VGE = ±20 V
IC = I90, VGE = 15 V
±100 nA
1.7
VCE(sat)
V
DS97548A(02/03)
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