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IXGT60N60 PDF预览

IXGT60N60

更新时间: 2024-01-07 22:39:04
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管
页数 文件大小 规格书
4页 98K
描述
Ultra-Low VCE(sat) IGBT

IXGT60N60 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-268AA
包装说明:D3PAK-3针数:3
Reach Compliance Code:compliant风险等级:5.67
其他特性:ULTRA FAST外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):570 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):650 ns
标称接通时间 (ton):50 nsBase Number Matches:1

IXGT60N60 数据手册

 浏览型号IXGT60N60的Datasheet PDF文件第2页浏览型号IXGT60N60的Datasheet PDF文件第3页浏览型号IXGT60N60的Datasheet PDF文件第4页 
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 1.7 V  
IXGH 60N60  
IXGK 60N60  
IXGT 60N60  
Ultra-Low VCE(sat) IGBT  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IX
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
G
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
TO-268  
(IXGT)  
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
75  
60  
A
A
A
E
TC = 25°C, 1 ms  
200  
(TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 mH  
ICM = 100  
@ 0.8 VCES  
A
TO-264 (IXGK
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
D
S
D (TAB)  
-55 ... +150  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
Weight  
TO-247  
TO-264  
TO-268  
6
10  
4
g
g
g
• Internationalstandardpackage  
JEDEC TO-247 AD, TO-264, TO-268  
• New generation HDMOSTM process  
• Low VCE(sat) for minimum on-state  
conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
V
5
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 mA  
mA  
Advantages  
1
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Low losses, high efficiency  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
1.7  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
• High power, surface mount package  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92796L(7/00)  
1 - 4  

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