Datasheet > IXGT72N60B3

IXGT72N60B3

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	263K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGT72N60B3 数据手册

GenX3^TMB3-Class

IGBTs

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 72A

≤£ 1.80V

= 90ns

IXGH72N60B3

IXGT72N60B3*

*Obsolete Part Number

Medium Speed low Vsat PT

IGBTs 5-40 kHz Switching

TO-247 AD (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

I_C25

Continuous

±20

±30

(TAB)

Transient

T_C= 25°C (Limited by Leads)

T_C= 110°C

T_C= 25°C, 1ms

I_C110

I_CM

TO-268 (IXGT)

400

I_A

T_C= 25°C

E_AS

200

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

I_CM= 240

(TAB)

(RBSOA)

@ V_CE≤ 600

P_C

T_C= 25°C

540

G = Gate

E = Emitter

= Collector

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

^zOptimized for Low Conduction and

Switching Losses

M_d

Mounting Torque (TO-247)

1.13 / 10

300

Nm/lb.in.

°C

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

^zSquare RBSOA

T_SOLD

Weight

260

°C

^zAvalanche Rated

^zInternational Standard Packages

TO-247

TO-268

Advantages

^zHigh Power Density

Symbol

Test Conditions

Characteristic Values

^zLow Gate Drive Requirement

(T_J= 25°C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES,V_GE= 0V

Applications

5.0

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

μA

T_J= 125°C

750 μA

I_GES

V_CE= 0V, V_GE= ±20V

±100

V_CE(sat)

I_C= 60A, V_GE= 15V, Note 1

1.51

1.48

1.80

DS99847A(02/09)

12 3 4 5 6 7

中文翻译

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