5秒后页面跳转
IXGT72N60A3 PDF预览

IXGT72N60A3

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 199K
描述
GenX3 600V IGBT

IXGT72N60A3 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268AA包装说明:PLASTIC PACKAGE-3
针数:4Reach Compliance Code:unknown
风险等级:5.61其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):540 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):885 ns标称接通时间 (ton):61 ns
Base Number Matches:1

IXGT72N60A3 数据手册

 浏览型号IXGT72N60A3的Datasheet PDF文件第2页浏览型号IXGT72N60A3的Datasheet PDF文件第3页浏览型号IXGT72N60A3的Datasheet PDF文件第4页浏览型号IXGT72N60A3的Datasheet PDF文件第5页浏览型号IXGT72N60A3的Datasheet PDF文件第6页 
GenX3TM 600V IGBT  
IXGH72N60A3  
IXGT72N60A3  
VCES = 600V  
IC110 = 72A  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
VCE(sat) 1.35V  
tfi(typ) = 250ns  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
C (TAB)  
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
72  
A
A
A
TO-268 (IXGT)  
TC = 25°C, 1ms  
400  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped inductive load @ 600V  
ICM = 150  
A
(RBSOA)  
G
PC  
TC = 25°C  
540  
W
E
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Optimized for low conduction losses  
z Square RBSOA  
z International standard packages  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
z Power Inverters  
z UPS  
z Motor Drives  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
V
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
3.0  
5.0  
ICES  
VCE = VCES  
VGE = 0V  
75 μA  
750 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.35  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99759B(07/08)  

与IXGT72N60A3相关器件

型号 品牌 获取价格 描述 数据表
IXGT72N60A3-TRL IXYS

获取价格

Insulated Gate Bipolar Transistor,
IXGT72N60B3 IXYS

获取价格

GenX3 B3-Class IGBTs
IXGT72N60B3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGV25N250S IXYS

获取价格

High Voltage IGBT For Capacitor Discharge Applications
IXGV32N170 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, PLUS220SM
IXGX100N170 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGX120N120A3 IXYS

获取价格

GenX3 A3-Class IGBTs
IXGX120N120A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGX120N120B3 IXYS

获取价格

GenX3 1200V IGBTs
IXGX120N120B3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30