Datasheet > IXGX120N60B3

IXGX120N60B3

更新时间： 2024-09-13 11:14:11

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	195K
描述
GenX3 600V IGBTs

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中文翻译

获取价格

数据手册
替代型号

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IXGX120N60B3 数据手册

GenX3^TM600V

IGBTs

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 120A

≤£ 1.8V

= 145ns

IXGK120N60B3

IXGX120N60B3

Medium-Speed-Low-Vsat PT

IGBTs for 5-40kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

600

±20

±30

V_CGR

Tab

V_GES

V_GEM

Transient

PLUS247^TM(IXGX)

I_C25

T_C= 25°C (Chip Capability)

T_C= 110°C

280

120

160

600

I_C110

I_LRMS

I_CM

Terminal Current Limit

T_C= 25°C, 1ms

Tab

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 300

V_CE≤ V_CES

P_C

T_C= 25°C

780

T_J

-55 ... +150

150

°C

G = Gate

C = Collector

= Emitter

Tab = Collector

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Optimized for Low Conduction and

Switching Losses

Square RBSOA

High Current Handling Capability

International Standard Packages

M_d

F_C

Mounting Torque (IXGK)

Mounting Force (IXGX)

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Symbol

Test Conditions

Characteristic Values

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

(T_J= 25°C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 500μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

50 μA

±100 nA

1.8

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

V_CE(sat)

I_C= 100A, V_GE= 15V, Note 1

1.5

DS99993A(09/10)

12 3 4 5 6

中文翻译

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IXGX120N60B3 替代型号

型号	品牌	替代类型	描述	数据表
IXGX120N60B	IXYS	类似代替	HiPerFAST IGBT

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