Datasheet > IXGX32N170AH1

IXGX32N170AH1

更新时间： 2024-11-18 12:27:43

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
2页	528K
描述
Advance Technical Information High Voltage IGBT with Diode

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数据手册

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IXGX32N170AH1 数据手册

Advance Technical Information

IXGX 32N170AH1

V_CES

I_C25

= 1700 V

32 A

High Voltage

IGBT with Diode

V_CE(sat)= 5.0 V

t_fi(typ)

50 ns

PLUS247 (IXGX)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1700

V_GES

V_GEM

Continuous

Transient

(TAB)

I_C25

I_C90

I_F90

I_CM

T_C= 25°C

T_C= 90°C

G = Gate,

C = Collector,

TAB = Collector

E=Emitter,

T_C= 25°C, 1 ms

110

SSOA

= 15 V, T_VJ= 125°C, R_G= 5Ω

= 70

(RBSOA)

C^Gla^Emped inductive load

@ 0^C.8^MV_CES

Features

t_SC

T_J= 125°C, V_CE= 1200 V; V_GE= 15 V, R_G= 10Ω

µs

High current handling capability

MOS Gate turn-on

P_C

T_C= 25°C

350

- drive simplicity

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Rugged NPT structure

Molding epoxies meet UL 94 V-0

flammability classification

Applications

F_C

Mounting force

22...130/5...30

N/lb

Capacitor discharge & pulser circuits

AC motor speed control

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

DC servo and robot drives

DC choppers

Weight

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

BV_CES

V_GE(th)

= 1mA, V_GE= 0 V

1700

3.0

I^C_C= 250 µA, V_CE= V_GE

5.0

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T = 25°C

600

µA

Note 1 T_J^J= 125°C

10 mA

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= I_C90, V_GE= 15 V

100

5.0

V_CE(sat)

T = 25°C

T_J^J= 125°C

4.0

4.8

DS99070A(10/04)

中文翻译

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