5秒后页面跳转
IXGX60N60C2D1 PDF预览

IXGX60N60C2D1

更新时间: 2024-11-05 03:14:35
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
5页 620K
描述
HiPerFASTTM IGBT with Diode

IXGX60N60C2D1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.82外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):210 ns
标称接通时间 (ton):43 nsBase Number Matches:1

IXGX60N60C2D1 数据手册

 浏览型号IXGX60N60C2D1的Datasheet PDF文件第2页浏览型号IXGX60N60C2D1的Datasheet PDF文件第3页浏览型号IXGX60N60C2D1的Datasheet PDF文件第4页浏览型号IXGX60N60C2D1的Datasheet PDF文件第5页 
Advance Technical Data  
HiPerFASTTM  
VCES  
IC25  
= 600 V  
= 75 A  
= 2.5 V  
= 35 ns  
IXGK60N60C2D1  
IXGX 60N60C2D1  
IGBT with Diode  
VCE(sat)  
tfi(typ)  
C2-Class High Speed IGBTs  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
G
C
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
PLUS247  
(IXGX)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
60  
300  
A
A
A
(TAB)  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE 600 V  
ICM = 100  
A
G = Gate  
C = Collector  
E = Emitter  
Tab = Collector  
PC  
TC = 25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Very high frequency IGBT and  
anti-parallel FRED in one package  
Square RBSOA  
Md  
Mounting torque, TO-264  
1.13/10 Nm/lb.in.  
High current handling capability  
Weight  
TO-264  
PLUS247  
10  
6
g
g
MOS Gate turn-on for drive simplicity  
Fast Recovery Epitaxial Diode (FRED)  
with soft recovery and low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Switch-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Uninterruptible power supplies (UPS)  
DC choppers  
AC motor speed control  
DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
TJJ = 125°C  
650  
5
µA  
VGE = 0CVES  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
2.5  
nA  
Advantages  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
T = 25°C  
TJJ = 125°C  
2.1  
1.8  
V
V
Space savings (two devices in one  
package)  
Easy to mount with 1 screw  
© 2003 IXYS All rights reserved  
DS99044A(09/03)  

与IXGX60N60C2D1相关器件

型号 品牌 获取价格 描述 数据表
IXGX64N60B3D1 IXYS

获取价格

GenX3 600V IGBT with Diode
IXGX64N60B3D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGX72N60A3H1 IXYS

获取价格

GenX3 600V IGBT w/Diode
IXGX72N60A3H1 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGX72N60B3H1 IXYS

获取价格

GenX3 600V IGBT with Diode
IXGX72N60B3H1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGX72N60C3H1 IXYS

获取价格

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGX72N60C3H1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGX75N250 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247,
IXGX75N250 IXYS

获取价格

Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247,