IXGX82N120B3

更新时间： 2024-11-05 11:08:07

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	218K
描述
GenX3 1200V IGBTs

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中文翻译

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数据手册

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IXGX82N120B3 数据手册

Advance Technical Information

GenX3^TM1200V

IGBTs

V_CES= 1200V

I_C110= 82A

V_CE(sat)≤ 3.20V

IXGK82N120B3

IXGX82N120B3

High-Speed Low-Vsat PT IGBTs

for 3 - 20 kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

V_CGR

(TAB)

V_GES

V_GEM

Transient

±30

PLUS247^TM(IXGX)

I_C25

T_C= 25°C ( Chip Capability )

T_C= 110°C

230

I_C110

I_LRMS

I_CM

T_C= 25°C ( Lead RMS Limit )

T_C= 25°C, 1ms

120

500

I_A

E_AS

T_C= 25°C

750

(TAB)

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

I_CM= 164

(RBSOA)

Clamped Inductive Load

V_CE< V_CES

G = Gate

C = Collector

= Emitter

P_C

T_C= 25°C

1250

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

^zOptimized for Low Conduction and

Switching Losses

^zSquare RBSOA

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

Nm/lb.in.

N/lb.

^zHigh Avalanche Capability

^zInternational Standard Packages

20..120/4.5..14.6

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

Symbol

Test Conditions

Characteristic Values

^zLow Gate Drive Requirement

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_CE= 0V

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

^zPower Inverters

^zUPS

^zSMPS

50 μA

5 mA

T_J= 125°C, Note 1

^zPFC Circuits

^zWelding Machines

^zLamp Ballasts

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 2

T_J= 125°C

2.70

2.64

3.20

DS100155(05/09)

12 3 4 5 6

中文翻译

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