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IXHH40N150HV PDF预览

IXHH40N150HV

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 脉冲栅极
页数 文件大小 规格书
5页 215K
描述
MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计,由施加在栅极的电压接通(MOS结构)。 能够在1微秒的时间内承载高达32kA的电流

IXHH40N150HV 数据手册

 浏览型号IXHH40N150HV的Datasheet PDF文件第2页浏览型号IXHH40N150HV的Datasheet PDF文件第3页浏览型号IXHH40N150HV的Datasheet PDF文件第4页浏览型号IXHH40N150HV的Datasheet PDF文件第5页 
Preliminary Technical Information  
VDM  
= 1500V  
1500V MOS Gated  
Thyristor  
IXHH40N150HV  
A
G
K
TO-247HV  
Symbol  
VDM  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1500  
V
G
K
VGK  
VGK  
Continuous  
Transient  
±30  
±40  
V
V
Tab  
A
ITSM  
TC = 25°C, 1μs  
TC = 25°C, 10μs  
7.6  
3.5  
kA  
kA  
PD  
TC = 25°C  
695  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
A = Anode  
K
= Cathode  
Tab = Anode  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Features  
Weight  
Very High Voltage Package  
Very High Current Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
Low Gate Drive Requirement  
VBR  
VGK(th)  
VT  
IA = 250A, VGK = 0V  
IA = 250μA, VAK = VGK  
IT = 1000A, VGK = 15V  
IT > IL, VGK = 15V  
VGK = 15V  
V
V
5.0  
7.5  
Applications  
5.95  
1.20  
6.45  
V
rT  
m  
V
Capacitive Discharge Circuits  
Ignition Circuits  
Solid State Surge Protection  
VBO  
ID  
VAK = 1500V, VGK = 0V  
15 A  
TJ = 125C  
1
mA  
IL  
IH  
250  
200  
A
A
IGKS  
VAK = 0V, VGK = 30V  
200 nA  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100611A(6/14)  

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