是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | SOP, | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.4 |
高边驱动器: | NO | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-PDSO-G8 | 长度: | 4.9 mm |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -25 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 最大供电电压: | 17 V |
标称供电电压: | 13 V | 表面贴装: | YES |
温度等级: | OTHER | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXI859 | IXYS |
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Gate Driver with VReg and Charge Pump Regulator | |
IXI859S1 | IXYS |
获取价格 |
Buffer/Inverter Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 | |
IXI859S1 | LITTELFUSE |
获取价格 |
Buffer/Inverter Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 | |
IXI859S1T/R | LITTELFUSE |
获取价格 |
Buffer/Inverter Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 | |
IXI859S1T/R | IXYS |
获取价格 |
Buffer/Inverter Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 | |
IXKC13N80C | IXYS |
获取价格 |
CoolMOS Power MOSFET ISOPLUS220 | |
IXKC15N60C5 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXKC19N60C5 | IXYS |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Me | |
IXKC19N60C5 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXKC20N60C | IXYS |
获取价格 |
CoolMOS Power MOSFET in ISOPLUS220 Package |