Datasheet > IXHX40N150V1HV

IXHX40N150V1HV

更新时间： 2024-09-16 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		栅脉冲栅极
页数	文件大小	规格书
5页	215K
描述
MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计，由施加在栅极的电压接通（MOS结构）。能够在1微秒的时间内承载高达32kA的电流

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中文翻译

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数据手册

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IXHX40N150V1HV 数据手册

Preliminary Technical Information

V_DM

= 1500V

1500V MOS Gated

Thyristor

IXHX40N150V1HV

w/ Anti-Parallel Diode

TO-247PLUS-HV

Symbol

V_DM

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1500

V_GK

Continuous

Transient

±30

±40

Tab

I_TSM

T_C= 25°C, 1μs

T_C= 25°C, 10μs

7.6

3.5

P_D

T_C= 25°C

695

G = Gate

= Cathode

A = Anode

Tab = Anode

T_J

T_JM

T_stg

-55 ... +150

150

°C

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10s

300

260

°C

F_C

Mounting Force

20..120 /4.5..27

N/lb

Features

Weight

^Very High Voltage Package

^Anti-Parallel Diode

^Very High Current Capability

Advantages

Symbol

Test Conditions

Characteristic Values

^High Power Density

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.

^Low Gate Drive Requirement

V_BR

V_GK(th)

V_T

I_A= 250A, V_GK= 0V

I_A= 250μA, V_AK= V_GK

I_T= 1000A, V_GK= 15V

I_T> I_L, V_GK= 15V

V_GK= 15V

5.0

7.5

5.95

1.20

6.45

Applications

r_T

m

^Capacitive Discharge Circuits

^Ignition Circuits

^Solid State Surge Protection

V_BO

I_D

V_AK= 1500V, V_GK= 0V

15 A

T_J= 125C

1.5 mA

I_L

I_H

250

200

I_GKS

V_AK= 0V, V_GK= 30V

200 nA

DS100610A(6/14)

12 3 4 5

中文翻译

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