Datasheet > IXGX82N120A3

IXGX82N120A3

更新时间： 2024-09-15 12:20:19

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	187K
描述
GenX3 1200V IGBTs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGX82N120A3 数据手册

Preliminary Technical Information

GenX3^TM1200V

IGBTs

V_CES= 1200V

I_C110= 82A

V_CE(sat)≤ 2.05V

IXGK82N120A3

IXGX82N120A3

Ultra-Low-Vsat PT IGBTs for

up to 3kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

Tab

V_CGR

V_GES

V_GEM

Transient

±30

PLUS247^TM(IXGX)

I_C25

T_C= 25°C ( Chip Capability )

T_C= 110°C

260

I_C110

I_LRMS

I_CM

T_C= 25°C (Lead RMS Limit)

T_C= 25°C, 1ms

120

580

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 164

Tab

@ 0.8 • V_CES

P_C

T_C= 25°C

1250

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Features

^zOptimized for Low Conduction Losses

^zInternational Standard Packages

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_CE= 0V

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

^zPower Inverters

^zUPS

5.0

^zMotor Drives

50 μA

^zSMPS

Note 1, T_J= 125°C

2.5 mA

^zPFC Circuits

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 2

T_J= 125°C

1.83 2.05

1.95

DS100164A(10/09)

12 3 4 5

中文翻译

下载PDF

与IXGX82N120A3相关器件

型号	品牌	获取价格	描述	数据表
IXGX82N120B3	IXYS	获取价格	GenX3 1200V IGBTs
IXGX82N120B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGY2N120	IXYS	获取价格	Insulated Gate Bipolar Transistor, 5A I(C), 1200V V(BR)CES, N-Channel, TO-252AA, TO-252AA,
IXHH40N150HV	LITTELFUSE	获取价格	MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计，由施加在栅极的电压接通（MOS结构）。
IXHQ100	IXYS	获取价格	Negative Voltage Hot Swap Controller with Active Power Filter
IXHQ100PI	IXYS	获取价格	Negative Voltage Hot Swap Controller with Active Power Filter
IXHQ100SI	IXYS	获取价格	Negative Voltage Hot Swap Controller with Active Power Filter
IXHX40N150V1HV	LITTELFUSE	获取价格	MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计，由施加在栅极的电压接通（MOS结构）。
IXI848AS1	IXYS	获取价格	Power Supply Support Circuit, Adjustable, 1 Channel, PDSO8, MS-012AA, SOIC-8
IXI848AS1T/R	IXYS	获取价格	Analog Circuit