Datasheet > IXGX82N120A3

IXGX82N120A3

更新时间： 2024-11-05 12:20:19

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	187K
描述
GenX3 1200V IGBTs

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中文翻译

获取价格

数据手册

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IXGX82N120A3 数据手册

Preliminary Technical Information

GenX3^TM1200V

IGBTs

V_CES= 1200V

I_C110= 82A

V_CE(sat)≤ 2.05V

IXGK82N120A3

IXGX82N120A3

Ultra-Low-Vsat PT IGBTs for

up to 3kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

Tab

V_CGR

V_GES

V_GEM

Transient

±30

PLUS247^TM(IXGX)

I_C25

T_C= 25°C ( Chip Capability )

T_C= 110°C

260

I_C110

I_LRMS

I_CM

T_C= 25°C (Lead RMS Limit)

T_C= 25°C, 1ms

120

580

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 164

Tab

@ 0.8 • V_CES

P_C

T_C= 25°C

1250

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Features

^zOptimized for Low Conduction Losses

^zInternational Standard Packages

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_CE= 0V

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

^zPower Inverters

^zUPS

5.0

^zMotor Drives

50 μA

^zSMPS

Note 1, T_J= 125°C

2.5 mA

^zPFC Circuits

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 2

T_J= 125°C

1.83 2.05

1.95

DS100164A(10/09)

12 3 4 5

中文翻译

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