型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXGX50N60BD1 | IXYS |
类似代替 |
HiPerFAST IGBT with Diode | |
IXGX50N60B2D1 | IXYS |
类似代替 |
HiPerFAST IGBT with Diode | |
IXGX60N60B2D1 | IXYS |
类似代替 |
HiPerFAST IGBT with Diode |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGX72N60C3H1 | IXYS |
获取价格 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications | |
IXGX72N60C3H1 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGX75N250 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247, | |
IXGX75N250 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247, | |
IXGX82N120A3 | IXYS |
获取价格 |
GenX3 1200V IGBTs | |
IXGX82N120A3 | LITTELFUSE |
获取价格 |
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对 | |
IXGX82N120B3 | IXYS |
获取价格 |
GenX3 1200V IGBTs | |
IXGX82N120B3 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGY2N120 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 5A I(C), 1200V V(BR)CES, N-Channel, TO-252AA, TO-252AA, | |
IXHH40N150HV | LITTELFUSE |
获取价格 |
MOS栅控晶闸管专为大功率脉冲和电容放电应用而设计,由施加在栅极的电压接通(MOS结构)。 |