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IXGX72N60B3H1 PDF预览

IXGX72N60B3H1

更新时间: 2024-11-05 11:08:07
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
7页 222K
描述
GenX3 600V IGBT with Diode

IXGX72N60B3H1 数据手册

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Preliminary Technical Information  
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 72A  
£ 1.8V  
= 92ns  
IXGK72N60B3H1  
IXGX72N60B3H1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
PLUS247 (IXGX)  
IC25  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
72  
A
A
A
A
IC110  
ICM  
450  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped inductive load @ VCE 600V  
ICM = 240  
G
C
E
PC  
TC = 25°C  
540  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
Features  
z Optimized for low conduction and  
switching losses  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
TSOLD  
Weight  
z Square RBSOA  
TO-264  
PLUS247  
10  
6
g
g
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z High power density  
z Low gate drive requirement  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
Applications  
VCE = VCES  
VGE = 0V  
300  
5
μA  
mA  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
V
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
IC = 120A  
1.50  
1.75  
1.80  
DS99869A(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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