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IXGX64N60B3D1 PDF预览

IXGX64N60B3D1

更新时间: 2024-11-05 11:08:07
品牌 Logo 应用领域
IXYS 晶体二极管晶体管功率控制瞄准线双极性晶体管
页数 文件大小 规格书
7页 181K
描述
GenX3 600V IGBT with Diode

IXGX64N60B3D1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):64 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):460 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):326 ns
标称接通时间 (ton):64 nsBase Number Matches:1

IXGX64N60B3D1 数据手册

 浏览型号IXGX64N60B3D1的Datasheet PDF文件第2页浏览型号IXGX64N60B3D1的Datasheet PDF文件第3页浏览型号IXGX64N60B3D1的Datasheet PDF文件第4页浏览型号IXGX64N60B3D1的Datasheet PDF文件第5页浏览型号IXGX64N60B3D1的Datasheet PDF文件第6页浏览型号IXGX64N60B3D1的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 64A  
£ 1.8V  
= 88ns  
IXGK64N60B3D1  
IXGX64N60B3D1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
IC110  
TC = 110°C  
64  
400  
A
A
A
PLUS247 (IXGX)  
ICM  
TC = 25°C, 1ms  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
ICM = 200  
Clamped inductive load @ VCE 600V  
TC = 25°C  
460  
W
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
-55 ... +150  
E = Emitter  
TAB = Collector  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
Features  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z Optimized for low conduction and  
switching losses  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Square RBSOA  
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z Power Inverters  
z UPS  
VCE = VCES  
VGE = 0V  
700  
2.5 mA  
μA  
z Motor Drives  
z SMPS  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
1.80  
nA  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
1.59  
DS99939A(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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