Datasheet > IXGX72N60C3H1

IXGX72N60C3H1

更新时间： 2024-11-06 14:56:59

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	918K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGX72N60C3H1 数据手册

GenX3^TM600V IGBT

with Diode

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 72A

≤£ 2.5V

= 55ns

IXGX72N60C3H1*

*Obsolete Part Number

High-Speed PT IGBT for

40-100kHz Switching

PLUS247

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C110

I_CM

T_C= 25°C (Limited by Leads)

T_C= 110°C (Chip Capability)

T_C= 25°C, 1ms

G = Gate

E = Emitter

= Collector

Tab = Collector

360

I_A

T_C= 25°C

E_AS

500

Features

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

I_CM= 150

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

^zOptimized for Low Switching Losses

^zSquare RBSOA

P_C

T_C= 25°C

540

^zAvalanche Rated

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Package

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Advantages

M_F

Mounting Force

20..120 / 4.5..27

N/lb.

°C

T_L

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

PLUS247

300

260

^zHigh Power Density

^zLow Gate Drive Requirement

T_SOLD

Weight

Applications

^zPower Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

^zMotor Drives

^zSMPS

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE= V_CES, V_GE= 0V

250

μA

T_J= 125°C

±100

2.50

I_GES

V_CE= 0V, V_GE= ±20V

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

T_J= 125°C

2.10

1.65

DS100011A(11/09)

12 3 4 5 6 7 8

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