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IXGX50N60C2D1 PDF预览

IXGX50N60C2D1

更新时间: 2024-11-18 03:14:35
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
6页 629K
描述
HiPerFAST IGBT with Diode

IXGX50N60C2D1 数据手册

 浏览型号IXGX50N60C2D1的Datasheet PDF文件第2页浏览型号IXGX50N60C2D1的Datasheet PDF文件第3页浏览型号IXGX50N60C2D1的Datasheet PDF文件第4页浏览型号IXGX50N60C2D1的Datasheet PDF文件第5页浏览型号IXGX50N60C2D1的Datasheet PDF文件第6页 
HiPerFASTTM  
VCES  
IC25  
= 600 V  
= 75 A  
= 2.5 V  
= 48 ns  
IXGK50N60C2D1  
IXGX 50N60C2D1  
IGBT with Diode  
VCE(sat)  
tfi(typ)  
C2-Class High Speed IGBTs  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
G
G
E
C
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
PLUS247  
(IXGX)  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 110°C  
75  
50  
48  
A
A
A
A
(TAB)  
E
TC = 25°C, 1 ms  
300  
G = Gate  
C = Collector  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 100  
A
E = Emitter  
Tab = Collector  
(RBSOA)  
Clamped inductive load @ VCE 600 V  
PC  
TC = 25°C  
480  
W
Features  
Very high frequency IGBT and  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
anti-parallel FRED in one package  
Square RBSOA  
High current handling capability  
MOS Gate turn-on for drive simplicity  
Md  
Mounting torque, TO-264  
1.13/10 Nm/lb.in.  
Fast Recovery Epitaxial Diode (FRED)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
with soft recovery and low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Switch-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
Uninterruptible power supplies (UPS)  
(TJ = 25°C, unless otherwise specified)  
DC choppers  
Min. Typ. Max.  
AC motor speed control  
DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
TJJ = 125°C  
650  
5
µA  
VGE = 0CVES  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
2.5  
nA  
Advantages  
VCE(sat)  
IC = 40 A, VGE = 15 V  
Note 1  
T = 25°C  
TJJ = 125°C  
2.1  
1.8  
V
V
Space savings (two devices in one  
package)  
Easy to mount with 1 screw  
© 2004 IXYS All rights reserved  
DS99148A(05/04)  

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