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IXGX50N90B2D1 PDF预览

IXGX50N90B2D1

更新时间: 2024-11-22 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 267K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGX50N90B2D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:NBase Number Matches:1

IXGX50N90B2D1 数据手册

 浏览型号IXGX50N90B2D1的Datasheet PDF文件第2页浏览型号IXGX50N90B2D1的Datasheet PDF文件第3页浏览型号IXGX50N90B2D1的Datasheet PDF文件第4页浏览型号IXGX50N90B2D1的Datasheet PDF文件第5页浏览型号IXGX50N90B2D1的Datasheet PDF文件第6页浏览型号IXGX50N90B2D1的Datasheet PDF文件第7页 
HiPerFASTTM  
IGBT with Fast  
Diode  
IXGH 50N90B2D1  
IXGK 50N90B2D1  
IXGX 50N90B2D1  
VCES  
IC25  
= 900 V  
= 75 A  
VCE(sat) = 2.7 V  
tfityp  
= 200 ns  
B2-Class High Speed IGBT  
with Fast Diode  
PreliminaryDataSheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
PLUS247 (IXGX)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600V  
ICM = 100  
A
TAB)  
(RBSOA)  
G
C
E
PC  
TC = 25°C  
400  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TO-264 (IXGK)  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
D
S
C (TAB)  
Md  
Mounting torque (TO-247, TO-264)  
1.13/10Nm/lb.in.  
FC  
Mounting force (PLUS247)  
20..120 / 4.5..25  
N/lb  
G = Gate  
E=Emitter  
C = Collector  
TAB = Collector  
Weight  
TO-247  
TO-264  
PLUS247  
6
10  
6
g
g
g
Features  
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
Symbol  
TestConditions  
Characteristic Values  
min. typ. max.  
- drive simplicity  
(TJ = 25°C unless otherwise specified)  
Applications  
VGE(th)  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
ICES  
VCE = VCES  
VGE = 0 V  
50  
1
μA  
mA  
TJ = 150°C  
TJ = 125°C  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
nA  
VCE(sat)  
IC = IC110, VGE = 15 V, Note 1  
2.2  
2.7  
V
V
Advantages  
High power density  
Very fast switching speeds for high  
frequency applications  
DS99393(01/06)  
© 2006 IXYS All rights reserved  

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