Datasheet > IXGX55N120A3D1

IXGX55N120A3D1

更新时间： 2024-11-06 07:16:35

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
2页	99K
描述
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGX55N120A3D1 数据手册

Advance Technical Information

GenX3^TM1200V

IGBTs w/ Diode

V_CES= 1200V

I_C110= 55A

V_CE(sat)≤ 2.2V

IXGK55N120A3D1

IXGX55N120A3D1

Ultra-Low-Vsat PT IGBTs for

up to 3kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

Tab

V_CGR

V_GES

V_GEM

Transient

±30

PLUS247^TM(IXGX)

I_C25

T_C= 25°C ( Chip Capability )

T_C= 110°C

125

I_C110

I_LRMS

I_CM

T_C= 25°C (Lead RMS Limit)

T_C= 25°C, 1ms

120

400

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

I_CM= 110

Tab

@ 0.8 • V_CES

P_C

T_C= 25°C

460

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Features

^zOptimized for Low Conduction Losses

^zInternational Standard Packages

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

3.0

5.0

^zPower Inverters

^zUPS

100 μA

Note 1, T_J= 125°C

2.0 mA

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 2

T_J= 125°C

1.85

1.90

2.2

DS100207(10/09)

中文翻译

下载PDF

与IXGX55N120A3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGX55N120A3H1	IXYS	获取价格	GenX3 1200V IGBTs w/ Diode
IXGX55N120A3H1	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGX60N60B2D1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGX60N60C2D1	IXYS	获取价格	HiPerFASTTM IGBT with Diode
IXGX64N60B3D1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGX64N60B3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGX72N60A3H1	IXYS	获取价格	GenX3 600V IGBT w/Diode
IXGX72N60A3H1	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGX72N60B3H1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGX72N60B3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30