Datasheet > IXGX55N120A3D1

IXGX55N120A3D1

更新时间： 2024-09-16 07:16:35

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
2页	99K
描述
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,

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中文翻译

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数据手册

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IXGX55N120A3D1 数据手册

Advance Technical Information

GenX3^TM1200V

IGBTs w/ Diode

V_CES= 1200V

I_C110= 55A

V_CE(sat)≤ 2.2V

IXGK55N120A3D1

IXGX55N120A3D1

Ultra-Low-Vsat PT IGBTs for

up to 3kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

Tab

V_CGR

V_GES

V_GEM

Transient

±30

PLUS247^TM(IXGX)

I_C25

T_C= 25°C ( Chip Capability )

T_C= 110°C

125

I_C110

I_LRMS

I_CM

T_C= 25°C (Lead RMS Limit)

T_C= 25°C, 1ms

120

400

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

I_CM= 110

Tab

@ 0.8 • V_CES

P_C

T_C= 25°C

460

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Features

^zOptimized for Low Conduction Losses

^zInternational Standard Packages

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

3.0

5.0

^zPower Inverters

^zUPS

100 μA

Note 1, T_J= 125°C

2.0 mA

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 2

T_J= 125°C

1.85

1.90

2.2

DS100207(10/09)

中文翻译

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