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IXGX35N120C PDF预览

IXGX35N120C

更新时间: 2024-09-14 03:14:35
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
2页 129K
描述
HiPerFAST IGBT

IXGX35N120C 技术参数

生命周期:Transferred包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.62Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):70 A
集电极-发射极最大电压:1200 V配置:SINGLE
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):480 ns
标称接通时间 (ton):86 nsBase Number Matches:1

IXGX35N120C 数据手册

 浏览型号IXGX35N120C的Datasheet PDF文件第2页 
Preliminary Data Sheet  
HiPerFASTTM IGBT  
IXGK 35N120C  
IXGX 35N120C  
IXGK 35N120CD1  
IXGX 35N120CD1  
VCES = 1200 V  
IC25  
=
70 A  
VCE(sat) = 4.0 V  
tfi(typ) = 115 ns  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA (IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (TAB)  
E
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
70  
35  
140  
A
A
A
PLUS 247TM (IXGX)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 90  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
350  
PC  
TC = 25°C  
W
C (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
C
E
G = Gate,  
C = Collector,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
E = Emitter,  
TAB = Collector  
Features  
Md  
Mounting torque (M3) (IXGK)  
1.13/10Nm/lb.in.  
International standard packages  
JEDEC TO-264 and PLUS247TM  
Weight  
TO-264AA  
PLUS247TM  
10  
6
g
g
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
DC servo and robot drives  
min. typ. max.  
DC choppers  
Uninterruptible power supplies  
BVCES  
VGE(th)  
I
= 1 mA, V = 0 V  
1200  
2.5  
V
ICC = 750 µA,GVECE = VGE  
5
V
(UPS)  
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = V  
T = 25°C  
TJJ = 125°C  
250  
5
µA  
VGE = 0CVES  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
High power density  
Easy to mount with 1 screw,  
VCE(sat)  
IC = IC90, VGE = 15 V  
4.0  
V
V
(isolated mounting screw hole)  
TJ = 125°C  
3.2  
Spring clip or clamp assembly  
possible.  
DS98961 (10/02)  
© 2002 IXYS All rights reserved  

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