Datasheet > IXGX50N60A2D1

IXGX50N60A2D1

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		晶体二极管晶体管功率控制双极性晶体管局域网
页数	文件大小	规格书
6页	124K
描述
IGBT with Diode

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中文翻译

获取价格

数据手册

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IXGX50N60A2D1 数据手册

Advance Technical Data

V_CES

I_C25

V_CE(sat)

= 600 V

= 75 A

= 1.4 V

IXGK50N60A2D1

IXGX 50N60A2D1

IGBT with Diode

Low Saturation Voltage

Symbol

TestConditions

Maximum Ratings

TO-264

(IXGK)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

(TAB)

V_GES

V_GEM

Continuous

Transient

PLUS247

(IXGX)

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 110°C (50N60B2D1 Diode)

T_C= 25°C, 1 ms

(TAB)

200

G = Gate

C = Collector

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 80

E = Emitter

Tab = Collector

(RBSOA)

Clamped inductive load @ V_CE≤ 600 V

P_C

T_C= 25°C

400

Features

• Low on-state voltage IGBT and

anti-parallel diode in one package

• High current handling capability

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

• MOS Gate turn-on for drive simplicity

M_d

Mounting torque, TO-264

1.13/10 Nm/lb.in.

Weight

TO-264

PLUS247

Applications

• Lighting controls

• Heating controls

• AC/DC relays

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Advantages

• Space savings (two devices in one

package)

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

600

µA

• Easy to mount with 1 screw or spring

clip

I_GES

V_CE= 0 V, V_GE= 20 V

100

1.4

V_CE(sat)

I_C= 50 A, V_GE= 15 V

Note 1

1.1

T_J= 125°C

DS99275(12/04)

12 3 4 5 6

中文翻译

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