型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGX50N60A2U1 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3PIN | |
IXGX50N60AU1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGX50N60AU1S | IXYS |
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HiPerFAST IGBT with Diode | |
IXGX50N60B2D1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGX50N60BD1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGX50N60C2D1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGX50N60C2D1 | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGX50N90B2D1 | IXYS |
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HiPerFAST IGBT with Fast Diode | |
IXGX50N90B2D1 | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGX55N120A3D1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, |