Datasheet > IXGX50N120C3H1

IXGX50N120C3H1

更新时间： 2024-09-14 12:20:19

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	224K
描述
GenX3 1200V IGBTs w/ Diode

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中文翻译

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数据手册

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IXGX50N120C3H1 数据手册

Advance Technical Information

GenX3^TM1200V IGBTs

w/ Diode

V_CES= 1200V

I_C100= 50A

V_CE(sat)≤ 4.2V

t_fi(typ)= 64ns

IXGK50N120C3H1

IXGX50N120C3H1

High-Speed PT IGBTs

for 20 - 50 kHz Switching

TO-264 (IXGK)

Symbol

Test Conditions

Maximum Ratings

(TAB)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

PLUS247^TM(IXGX)

I_C25

I_C100

I_CM

T_C= 25°C ( Chip Capability )

T_C= 100°C

T_C= 25°C, 1ms

240

I_A

E_AS

T_C= 25°C

750

(TAB)

SSOA

V_GE= 15V, T_J= 125°C, R_G= 3Ω

I_CM= 100

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

G = Gate

C = Collector

= Emitter

P_C

T_C= 25°C

460

TAB = Collector

T_J

T_JM

T_stg

-55 ... +150

150

°C

Features

-55 ... +150

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zHigh Avalanche Capability

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Packages

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

Nm/lb.in.

N/lb.

20..120/4.5..14.6

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

^zHigh Frequency Power Inverters

^zUPS

V_CE= V_CES, V_GE= 0V

250 μA

T_J= 125°C, Note 1

14 mA

^zMotor Drives

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE(sat)

I_C

= 40A, V_GE= 15V, Note 2

T_J= 125°C

4.2

2.6

DS100163(06/09)

12 3 4 5 6

中文翻译

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