Datasheet > IXGT40N120B2D1

IXGT40N120B2D1

更新时间： 2024-11-21 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	241K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGT40N120B2D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

IXGT40N120B2D1 数据手册

High Voltage IGBTs

w/Diode

V_CES= 1200V

I_C110= 40A

V_CE(sat)≤ 3.5V

t_fi(typ)= 140ns

IXGH40N120B2D1

IXGT40N120B2D1

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

1200

V_GES

V_GEM

Continuous

Transient

± 20

± 30

C (TAB)

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (Limited by Lead)

T_C= 110°C

TO-268 (IXGT)

T_C= 25°C, 1ms

200

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM

@ 0.8 ≤ V_CES

P_C

T_C= 25°C

380

C (TAB)

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate

E = Emitter

= Collector

TAB = Collector

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Features

Weight

TO-247

TO-268

^zInternational Standard Packages

^zIGBT and Anti-Parallel FRED for

Resonant Power Supplies

- Induction Heating

- Rice Cookers

^zSquare RBSOA

^zFast Recovery Expitaxial Diode

(FRED)

- Soft Recovery with Low I_RM

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

V_CE= V_CES,V_GE= 0V

100 μA

±100 nA

3.5

Advantages

T_J= 125°C

^zHigh Power Density

^zLow Gate Drive Requirement

I_GES

V_CE= 0V, V_GE= ± 20V

V_CE(sat)

I_C= 40A, V_GE= 15V, Note 1

2.9

DS99555B(02/09)

12 3 4 5 6 7 8

中文翻译

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