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IXGT50N90B2 PDF预览

IXGT50N90B2

更新时间: 2023-12-06 20:12:08
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管功率控制
页数 文件大小 规格书
6页 227K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGT50N90B2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

IXGT50N90B2 数据手册

 浏览型号IXGT50N90B2的Datasheet PDF文件第2页浏览型号IXGT50N90B2的Datasheet PDF文件第3页浏览型号IXGT50N90B2的Datasheet PDF文件第4页浏览型号IXGT50N90B2的Datasheet PDF文件第5页浏览型号IXGT50N90B2的Datasheet PDF文件第6页 
Advance Technical Information  
HiPerFASTTM IGBT  
VCES  
IC25  
= 900 V  
= 75 A  
IXGH 50N90B2  
IXGT 50N90B2  
B2-Class High Speed IGBTs  
VCE(sat) = 2.7 V  
tfityp = 200 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
TO-268  
(IXGT)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
TC = 25°C, 1 ms  
200  
G
C (TAB)  
E
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
400  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
1
µA  
mA  
Advantages  
z
High power density  
Very fast switching speeds for high  
frequency applications  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC110, VGE = 15 V  
100  
2.7  
nA  
z
VCE(sat)  
2.2  
V
V
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99377(04/05)  

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