5秒后页面跳转
IXGT39N60BD1 PDF预览

IXGT39N60BD1

更新时间: 2024-11-04 23:13:35
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
5页 155K
描述
HiPerFAST IGBT

IXGT39N60BD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-268AA
包装说明:TO-268, 3 PIN针数:4
Reach Compliance Code:compliant风险等级:5.68
外壳连接:COLLECTOR最大集电极电流 (IC):76 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):710 ns
标称接通时间 (ton):55 nsBase Number Matches:1

IXGT39N60BD1 数据手册

 浏览型号IXGT39N60BD1的Datasheet PDF文件第2页浏览型号IXGT39N60BD1的Datasheet PDF文件第3页浏览型号IXGT39N60BD1的Datasheet PDF文件第4页浏览型号IXGT39N60BD1的Datasheet PDF文件第5页 
HiPerFASTTM IGBT  
IXGH39N60B  
IXGH39N60BD1 IC25  
IXGT39N60B  
IXGT39N60BD1 tfi  
VCES  
= 600 V  
= 76 A  
VCE(sat) = 1.7 V  
= 200 ns  
Preliminarydata  
(D1)  
TO-268  
(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
76  
39  
152  
A
A
A
C (TAB)  
G
C
SSOA  
V
= 15 V, TVJ = 125°C, RG = 22 Ω  
I
= 76  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
200  
E
(RBSOA)  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
JEDEC TO-247 AD & TO-268  
High current handling capability  
Newest generation HDMOSTM process  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
z
z
Md  
Mounting torque (M3)  
TO-247  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
Applications  
z
PFC circuits  
Symbol  
TestConditions  
Characteristic Values  
z
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
z
DC servo and robot drives  
Min. Typ. Max.  
z
DC choppers  
z
BVCES  
VGE(th)  
ICES  
I
= 250 µA, VGE = 0 V  
39N60B  
600  
600  
V
Uninterruptible power supplies (UPS)  
ICC = 750 µA  
39N60BD1  
z
Switched-mode and resonant-mode  
power supplies  
I
= 250 µA, VCE = VGE  
39N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
39N60BD1 2.5  
Advantages  
VCE = 0.8 • VCES TJ = 25°C  
39N60B  
200 µA  
z
High power density  
VGE = 0 V  
TJ = 125°C  
TJ = 125°C  
39N60B  
1
3
mA  
mA  
z
Very fast switching speeds for high  
39N60BD1  
frequency applications  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = I90, VGE = 15 V  
±100 nA  
1.7  
VCE(sat)  
V
DS97548A(02/03)  
© 2003 IXYS All rights reserved  

与IXGT39N60BD1相关器件

型号 品牌 获取价格 描述 数据表
IXGT40N120A2 IXYS

获取价格

High Voltage IGBT Low V
IXGT40N120A2 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGT40N120B2D1 IXYS

获取价格

High Voltage IGBTs w/Diode
IXGT40N120B2D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGT40N60B IXYS

获取价格

HiPerFAST IGBT
IXGT40N60B2 IXYS

获取价格

HiPerFAST IGBT
IXGT40N60B2D1 IXYS

获取价格

HiPerFAST IGBT
IXGT40N60C IXYS

获取价格

HiPerFAST IGBT Lightspeed Series
IXGT40N60C2 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, TO-268, 3
IXGT40N60C2D1 IXYS

获取价格

HiPerFASTTM IGBTs w/ Diode