是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-268AA |
包装说明: | TO-268, 3 PIN | 针数: | 4 |
Reach Compliance Code: | compliant | 风险等级: | 5.65 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JEDEC-95代码: | TO-268AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 390 ns | 标称接通时间 (ton): | 38 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGT40N60B2D1 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGT40N60C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGT40N60C2 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 | |
IXGT40N60C2D1 | IXYS |
获取价格 |
HiPerFASTTM IGBTs w/ Diode | |
IXGT45N120 | IXYS |
获取价格 |
IGBT | |
IXGT4N250C | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, PLASTIC, | |
IXGT4N250C | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, PLASTIC, | |
IXGT50N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGT50N60B2 | IXYS |
获取价格 |
HiPerFASTTM IGBT B2-Class High Speed IGBTs | |
IXGT50N60C2 | IXYS |
获取价格 |
HiPerFAST IGBT C2-Class High Speed IGBTs |