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IXGT32N90B2 PDF预览

IXGT32N90B2

更新时间: 2024-04-09 18:40:54
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 260K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGT32N90B2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

IXGT32N90B2 数据手册

 浏览型号IXGT32N90B2的Datasheet PDF文件第2页浏览型号IXGT32N90B2的Datasheet PDF文件第3页浏览型号IXGT32N90B2的Datasheet PDF文件第4页浏览型号IXGT32N90B2的Datasheet PDF文件第5页浏览型号IXGT32N90B2的Datasheet PDF文件第6页浏览型号IXGT32N90B2的Datasheet PDF文件第7页 
Advance Technical Information  
HiPerFASTTM IGBT  
IXGH 32N90B2  
IXGT 32N90B2  
VCES  
IC25  
= 900 V  
= 64 A  
B2-Class High Speed IGBTs  
VCE(sat) = 2.7 V  
tfityp  
= 150 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
64  
32  
A
A
A
TO-268(IXGT)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600V  
ICM = 64  
A
G
C (TAB)  
E
(RBSOA)  
PC  
TC = 25°C  
300  
W
G = Gate,  
C = Collector,  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
z
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
z
VGE(th)  
ICES  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
750  
μA  
μA  
Advantages  
z
High power density  
Very fast switching speeds for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
z
VCE(sat)  
IC = IC110, VGE = 15 V  
2.2  
2.1  
2.7  
V
V
frequency applications  
TJ = 125°C  
© 2005 IXYS All rights reserved  
DS99384(12/05)  

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