Datasheet > IXGT35N120B

IXGT35N120B

更新时间： 2024-03-25 22:01:52

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	126K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGT35N120B 数据手册

Advance Technical Information

HiPerFAST^TMIGBT

IXGH 35N120B V_CES= 1200 V

IXGT 35N120B I_C2

V_CE(sat)

70 A

3.3 V

t_fi(typ)= 160 ns

Symbol

TestConditions

MaximumRatings

TO-268

(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-247 AD (IXGH)

T_C= 90°C

T_C= 25°C, 1 ms

140

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 5 W

I_CM= 90

C (TAB)

(RBSOA)

Clampedinductiveload

@ 0.8 V_CES

P_C

T_C= 25°C

300

T_J

-55 ... +150

150

°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_JM

T_stg

-55 ... +150

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

300

260

°C

Features

• Internationalstandardpackages

JEDEC TO-268 and

JEDEC TO-247 AD

M_d

Mountingtorque(M3)

1.13/10 Nm/lb.in.

Weight

TO-247 AD

TO-268

• Low switching losses, low V_(sat)

• MOS Gate turn-on

- drive simplicity

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

BV_CES

V_GE(th)

I_C= 1 mA, V_GE= 0 V

I_C= 750 mA, V_CE= V_GE

1200

2.5

I_CES

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

250

Advantages

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

• High power density

• Suitableforsurfacemounting

• Easy to mount with 1 screw,

(isolatedmountingscrewhole)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

3.3

T_J= 125°C

2.7

IXYS reserves the right to change limits, test conditions, and dimensions.

98665(11/99)

1 - 2

12 3

中文翻译

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