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IXGT28N120BD1 PDF预览

IXGT28N120BD1

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 225K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGT28N120BD1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:NBase Number Matches:1

IXGT28N120BD1 数据手册

 浏览型号IXGT28N120BD1的Datasheet PDF文件第2页浏览型号IXGT28N120BD1的Datasheet PDF文件第3页浏览型号IXGT28N120BD1的Datasheet PDF文件第4页浏览型号IXGT28N120BD1的Datasheet PDF文件第5页浏览型号IXGT28N120BD1的Datasheet PDF文件第6页浏览型号IXGT28N120BD1的Datasheet PDF文件第7页 
High Voltage IGBT  
w/ Diode  
VCES = 1200V  
IC25 = 50A  
VCE(sat) 3.5V  
tfi(typ) = 170ns  
IXGH28N120BD1  
IXGT28N120BD1  
TO-247AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXGT)  
IC25  
IC100  
IF90  
TC = 25°C ( Chip Capability )  
TC = 100°C  
TC = 90°C  
50  
28  
10  
A
A
A
G
E
ICM  
TC = 25°C, 1ms  
150  
ICM = 120  
0.8 VCES  
250  
A
A
C (TAB)  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
TC = 25°C  
G = Gate  
E = Emitter  
C
= Collector  
W
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z International Standard Packages  
JEDEC TO-247AD & TO-268  
z IGBT and Anti-Parallel FRED for  
Resonant Power Supplies  
- Induction Heating  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-286  
6
4
g
g
- Rice Cookers  
z MOS Gate Turn-On  
z Fast Recovery Expitaxial Diode (FRED)  
- Soft Recovery with Low IRM  
Advantages  
z Saves Space (Two Devices in One  
Package)  
Easy to Mount with 1 Screw  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
(Isolated Mounting Screw Hole)  
Reduces Assembly Time and Cost  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
2.5  
5.0  
V
z
VCE = VCES, VGE= 0V  
50 μA  
TJ = 125°C, Note1  
250 μA  
Applications  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
VCE(sat)  
IC  
= 28A, VGE = 15V, Note 2  
TJ = 125°C  
2.9  
2.8  
3.5  
V
V
Uninterruptible Power Supplies (UPS)  
DC Choppers  
AC Motor Speed Drives  
DC Servo and Robot Drives  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS98988G(08/09)  

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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30