Datasheet > IXGT28N120B

IXGT28N120B

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
6页	642K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGT28N120B 数据手册

IXGH 28N120B V_CES= 1200 V

IXGT 28N120B I_C25

50 A

High Voltage IGBT

V_CE(sat)= 3.5 V

t_fi(typ)= 160 ns

TO-268(IXGT)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1200

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1 ms

150

TO-247AD(IXGH)

SSOA

= 15 V, T_VJ= 125°C, R_G= 5 Ω

= 120

(RBSOA)

C^Gla^Emped inductive load

@^C0^M.8 V_CES

250

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate,

C = Collector,

TAB = Collector

E = Emitter,

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

Features

ꢀ

High Voltage IGBT for resonant

power supplies

M_d

Mounting torque (M3) (TO-247)

1.13/10Nm/lb.in.

- Induction heating

Weight

TO-247 AD

TO-268

- Rice cookers

ꢀ

International standard packages

JEDEC TO-268 and

JEDEC TO-247 AD

ꢀ

Low switching losses, low V_(sat)

MOS Gate turn-on

- drive simplicity

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Advantages

BV_CES

V_GE(th)

= 250 µA , V_GE= 0 V

1200

2.5

I^C_C= 250 µA, V_CE= V_GE

ꢀ

High power density

ꢀ

Suitable for surface mounting

ꢀ

I_CES

V_CE= V_CES, V_GE= 0 V

T_J= 25°C

T_J= 125°C

µA

Easy to mount with 1 screw,

(isolated mounting screw hole)

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 28A, V_GE= 15 V

100

3.5

V_CE(sat)

2.8

2.75

DS98987E(04/04)

12 3 4 5 6

中文翻译

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