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IXGT28N120B PDF预览

IXGT28N120B

更新时间: 2024-11-05 03:14:35
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管高压
页数 文件大小 规格书
5页 575K
描述
High Voltage IGBT

IXGT28N120B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-268AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliant风险等级:5.68
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:1200 V
配置:SINGLE最大降落时间(tf):320 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):590 ns标称接通时间 (ton):63 ns
Base Number Matches:1

IXGT28N120B 数据手册

 浏览型号IXGT28N120B的Datasheet PDF文件第2页浏览型号IXGT28N120B的Datasheet PDF文件第3页浏览型号IXGT28N120B的Datasheet PDF文件第4页浏览型号IXGT28N120B的Datasheet PDF文件第5页 
IXGH 28N120B VCES = 1200 V  
IXGT 28N120B IC25  
50 A  
High Voltage IGBT  
=
VCE(sat) = 3.5 V  
tfi(typ) = 160 ns  
TO-268(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
50  
28  
150  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 120  
A
(RBSOA)  
CGlaE mped inductive load  
@C0M.8 VCES  
250  
G
C
E
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
Features  
High Voltage IGBT for resonant  
power supplies  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
- Induction heating  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- Rice cookers  
International standard packages  
JEDEC TO-268 and  
JEDEC TO-247 AD  
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
BVCES  
VGE(th)  
I
= 250 µA , VGE = 0 V  
1200  
2.5  
V
ICC = 250 µA, VCE = VGE  
5
V
High power density  
Suitable for surface mounting  
ICES  
VCE = VCES, VGE= 0 V  
TJ = 25°C  
TJ = 125°C  
25  
µA  
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 28A, VGE = 15 V  
100  
3.5  
nA  
VCE(sat)  
2.8  
V
V
2.75  
© 2004 IXYS All rights reserved  
DS98987E(04/04)  

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