5秒后页面跳转
IXGT24N60C PDF预览

IXGT24N60C

更新时间: 2024-10-01 03:14:35
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 56K
描述
HiPerFAST IGBT Lightspeed Series

IXGT24N60C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-268AA
包装说明:D3PAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.68
其他特性:FAST SWITCHING外壳连接:COLLECTOR
最大集电极电流 (IC):48 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):110 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):130 ns标称接通时间 (ton):15 ns
Base Number Matches:1

IXGT24N60C 数据手册

 浏览型号IXGT24N60C的Datasheet PDF文件第2页 
HiPerFASTTM IGBT  
LightspeedTMSeries  
IXGH 24N60C VCES  
IXGT 24N60C IC25  
= 600 V  
= 48 A  
VCE(sat)typ = 2.1 V  
tfi typ  
= 60 ns  
Preliminary data  
TO-268  
(IXGT)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
G
TJ = 25°C to 150°C; RGE = 1 MW  
V
C (TAB)  
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
48  
24  
96  
A
A
A
TO-247 AD  
(IXGH)  
TC = 110°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 100 mH  
ICM = 48  
@ 0.8 VCES  
A
G
C
E
PC  
TC = 25°C  
150  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-247 and surface  
mountableTO-268  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
• High frequency IGBT  
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
- drive simplicity  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• PFC circuits  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
VGE(th)  
ICES  
5
V
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200  
1
mA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• High power density  
• Very fast switching speeds for high  
frequencyapplications  
VCE(sat)  
IC = IC110, VGE = 15 V  
2.1  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98575(11/98)  
1 - 2  

与IXGT24N60C相关器件

型号 品牌 获取价格 描述 数据表
IXGT24N60CD1 IXYS

获取价格

HiPerFAST IGBT with Diode Lightspeed Series
IXGT25N160 IXYS

获取价格

High Voltage IGBT
IXGT25N160 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT25N250 IXYS

获取价格

High Voltage IGBT For Capacitor Discharge Applications
IXGT25N250 LITTELFUSE

获取价格

NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。 具有正温度系数Vce(sa
IXGT25N250HV LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 60A I(C), 2500V V(BR)CES, N-Channel,
IXGT28N120B IXYS

获取价格

High Voltage IGBT
IXGT28N120B LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGT28N120BD1 IXYS

获取价格

High Voltage IGBT w/ Diode
IXGT28N120BD1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30