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IXGH32N60BU1 PDF预览

IXGH32N60BU1

更新时间: 2024-11-17 22:07:07
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
6页 140K
描述
HiPerFAST IGBT with Diode

IXGH32N60BU1 数据手册

 浏览型号IXGH32N60BU1的Datasheet PDF文件第2页浏览型号IXGH32N60BU1的Datasheet PDF文件第3页浏览型号IXGH32N60BU1的Datasheet PDF文件第4页浏览型号IXGH32N60BU1的Datasheet PDF文件第5页浏览型号IXGH32N60BU1的Datasheet PDF文件第6页 
HiPerFASTTM IGBT  
with Diode  
IXGH 32N60BU1 VCES  
IC25  
= 600 V  
= 60 A  
VCE(sat) = 2.3 V  
tfi = 80 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
G = Gate,  
C = Collector,  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
60  
32  
120  
A
A
A
E = Emitter,  
SSOA  
V
= 15 V, T = 125°C, RG = 33 Ω  
I
= 64  
A
CGlaE mped indVuJctive load, L = 100 µH  
TC = 25°C  
@ 0C.8M VCES  
200  
Features  
(RBSOA)  
z
International standard packages  
PC  
W
JEDEC TO-247 SMD  
z
High frequency IGBT and antiparallel  
FRED in one package  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
z
High current handling capability  
Newest generation HDMOSTM process  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
Applications  
z
Weight  
6
g
AC motor speed control  
z
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
z
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
z
Space savings (two devices in one  
package)  
BVCES  
VGE(th)  
IC = 750µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
z
High power density  
Very fast switching speeds for high  
frequency applications  
5.0  
V
z
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
500  
8
µA  
TJJ = 125°C  
mA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
2.3  
DS95567C(02/03)  
© 2003 IXYS All rights reserved  

IXGH32N60BU1 替代型号

型号 品牌 替代类型 描述 数据表
STGW30NC60WD STMICROELECTRONICS

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