Datasheet > IXGH36N60B3C1

IXGH36N60B3C1

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	255K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGH36N60B3C1 数据手册

Preliminary Technical Information

GenX3^TM600V IGBT

w/ SiC Anti-Parallel

Diode

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 36A

≤ 1.8V

= 100ns

IXGH36N60B3C1

Medium Speed Low Vsat PT

IGBT for 5 - 40kHz Switching

TO-247

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

(TAB)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

G = Gate

E = Emitter

= Collector

TAB = Collector

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (Limited by Leads)

T_C= 110°C

Features

T_C= 25°C, 1ms

200

^zOptimized for Low Conduction and

Switching Losses

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 80

(RBSOA)

Clamped Inductive Load

@ ≤ V_CES

^zSquare RBSOA

P_C

T_C= 25°C

250

^zAnti-Parallel Schottky Diode

^zInternational Standard Package

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Advantages

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10 seconds

Plastic Body for 10 seconds

300

260

°C

^zHigh Power Density

^zLow Gate Drive Requirement

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Applications

^zPower Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

^zMotor Drives

^zSMPS

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE= V_CES, V_GE= 0V

μA

T_J=125°C

1.25 mA

I_GES

V_CE= 0V, V_GE= ± 20V

±100

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

1.5

1.8

DS100141A(06/09)

12 3 4 5 6 7

中文翻译

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与IXGH36N60B3C1相关器件

型号	品牌	获取价格	描述	数据表
IXGH36N60B3D1	IXYS	获取价格	GenX3 600V IGBT w/ Diode
IXGH36N60B3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH36N60B3D4	IXYS	获取价格	GenX3 600V IGBT
IXGH36N60B3D4	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH38N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGH38N60U1	IXYS	获取价格	Ultra-Low VCE(sat) IGBT with Diode
IXGH39N60B	IXYS	获取价格	HiPerFAST IGBT
IXGH39N60BD1	IXYS	获取价格	HiPerFAST IGBT
IXGH39N60BS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 76A I(C) \| TO-247SMD
IXGH39N60CD1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), N-Channel, TO-247AD,