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IXGH32N90B2 PDF预览

IXGH32N90B2

更新时间: 2024-11-06 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 260K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH32N90B2 数据手册

 浏览型号IXGH32N90B2的Datasheet PDF文件第2页浏览型号IXGH32N90B2的Datasheet PDF文件第3页浏览型号IXGH32N90B2的Datasheet PDF文件第4页浏览型号IXGH32N90B2的Datasheet PDF文件第5页浏览型号IXGH32N90B2的Datasheet PDF文件第6页浏览型号IXGH32N90B2的Datasheet PDF文件第7页 
Advance Technical Information  
HiPerFASTTM IGBT  
IXGH 32N90B2  
IXGT 32N90B2  
VCES  
IC25  
= 900 V  
= 64 A  
B2-Class High Speed IGBTs  
VCE(sat) = 2.7 V  
tfityp  
= 150 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
64  
32  
A
A
A
TO-268(IXGT)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600V  
ICM = 64  
A
G
C (TAB)  
E
(RBSOA)  
PC  
TC = 25°C  
300  
W
G = Gate,  
C = Collector,  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
z
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
z
VGE(th)  
ICES  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
750  
μA  
μA  
Advantages  
z
High power density  
Very fast switching speeds for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
z
VCE(sat)  
IC = IC110, VGE = 15 V  
2.2  
2.1  
2.7  
V
V
frequency applications  
TJ = 125°C  
© 2005 IXYS All rights reserved  
DS99384(12/05)  

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