Datasheet > IXGH36N60B3D1

IXGH36N60B3D1

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	201K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH36N60B3D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.13
Base Number Matches：	1

IXGH36N60B3D1 数据手册

GenX3^TM600V IGBT

w/ Diode

V_CES

I_C110

= 600V

= 36A

IXGH36N60B3D1

V_CE(sat)≤ 1.8V

Medium-Speed Low-Vsat PT IGBT

for 5 - 40kHz Switching

TO-247

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

600

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

(TAB)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C110

I_F110

I_CM

T_C= 110°C

G = Gate

E = Emitter

= Collector

T_C= 110°C

TAB = Collector

T_C= 25°C, 1ms

200

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 80

Features

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

^zOptimized for Low Conduction and

Switching Losses

P_C

T_C= 25°C

250

T_J

-55 ... +150

150

°C

^zSquare RBSOA

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Package

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Applications

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

300

μA

T_J=125°C

1.75

I_GES

V_CE= 0V, V_GE= ± 20V

±100

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

1.5

1.8

DS99903B(07/09)

12 3 4 5 6 7 8

中文翻译

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