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STGW30NC60KD PDF预览

STGW30NC60KD

更新时间: 2024-02-11 09:20:52
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
14页 349K
描述
30 A - 600 V - short circuit rugged IGBT

STGW30NC60KD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:ROHS COMPLIANT, TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.33
Is Samacsys:N最大集电极电流 (IC):60 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5.75 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):189 ns
标称接通时间 (ton):42.5 nsBase Number Matches:1

STGW30NC60KD 数据手册

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STGW30NC60KD  
30 A - 600 V - short circuit rugged IGBT  
Features  
Low on-voltage drop (V  
)
CE(sat)  
Low C / C ratio (no cross conduction  
res  
ies  
susceptibility)  
Short circuit withstand time 10 µs  
IGBT co-packaged with ultra fast free-wheeling  
diode  
3
2
1
Applications  
TO-247  
High frequency inverters  
Motor drivers  
Description  
Figure 1.  
Internal schematic diagram  
This IGBT utilizes the advanced PowerMESH™  
process resulting in an excellent trade-off  
between switching performance and low on-state  
behavior.  
Table 1.  
Order code  
STGW30NC60KD  
Device summary  
Marking  
Package  
TO-247  
Packaging  
GW30NC60KD  
Tube  
March 2008  
Rev 2  
1/14  
www.st.com  
14  

STGW30NC60KD 替代型号

型号 品牌 替代类型 描述 数据表
FGH60N60UFDTU FAIRCHILD

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600V, 60A Field Stop IGBT
HGTG30N60B3 FAIRCHILD

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60A, 600V, UFS Series N-Channel IGBT

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