Datasheet > IXGH32N60CD1

IXGH32N60CD1

更新时间： 2024-11-06 11:14:07

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
5页	164K
描述
HiPerFAST IGBT with Diode

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中文翻译

获取价格

数据手册
替代型号

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IXGH32N60CD1 数据手册

HiPerFAST^TMIGBT

with Diode

IXGH 32N60CD1

IXGT 32N60CD1

V_CES

I_C25

= 600 V

= 60 A

V_CE(SAT)typ= 2.1 V

t_fi(typ)

= 55 ns

Light Speed Series

TO-247AD(IXGH)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

120

TO-268 (D3) ( IXGT)

SSOA

= 15 V, T = 125°C, R_G= 10 Ω

I_CM= 64

(RBSOA)

C^Gla^Emped ind^Vu^Jctive load @ 0.8 V_CES

C (TAB)

P_C

T_C= 25°C

200

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

C = Collector

E = Emitter

Maximum Lead and Tab temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

M_d

Mounting torque, TO-247 AD

1.13/10 Nm/lb.in.

International standard TO-247AD

Weight

TO-247 AD

TO-268

package

High current handling capability

Latest generation HDMOS^TMprocess

MOS Gate turn-on

- drive simplicity

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

AC motor speed control

BV_CES

V_GE(th)

I_C= 250µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

600

2.5

DC servo and robot drives

5.0

DC choppers

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T = 25°C

200

µA

T_J^J= 125°C

Advantages

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

Very fast switching speeds for high

frequency applications

V_CE(sat)

I_C= I_C90, V_GE= 15 V

2.1

2.5

High power surface mountable package

97544E (6/02)

12 3 4 5

中文翻译

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IXGH32N60CD1 替代型号

型号	品牌	替代类型	描述	数据表
STGW35HF60WD	STMICROELECTRONICS	功能相似	35 A, 600 V ultra fast IGBT
STGW30NC60KD	STMICROELECTRONICS	功能相似	30 A - 600 V - short circuit rugged IGBT
IRG4PH50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IXGH32N60CD1相关器件

型号	品牌	获取价格	描述	数据表
IXGH32N60CS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N90B2	IXYS	获取价格	HiPerFAST IGBT B2-Class High Speed IGBTs
IXGH32N90B2	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH32N90B2D1	IXYS	获取价格	HiPerFAST IGBT with Fast Diode
IXGH34N60B2	IXYS	获取价格	HiPerFAST IGBT
IXGH35N120	IXYS	获取价格	IGBT Lightspeed Series
IXGH35N120B	IXYS	获取价格	HiPerFAST IGBT
IXGH35N120B	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH35N120C	IXYS	获取价格	IGBT Lightspeed Series
IXGH36N60A3	IXYS	获取价格	GenX3 600V IGBT