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IXGH36N60B3 PDF预览

IXGH36N60B3

更新时间: 2024-11-19 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 188K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH36N60B3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.13
Base Number Matches:1

IXGH36N60B3 数据手册

 浏览型号IXGH36N60B3的Datasheet PDF文件第2页浏览型号IXGH36N60B3的Datasheet PDF文件第3页浏览型号IXGH36N60B3的Datasheet PDF文件第4页浏览型号IXGH36N60B3的Datasheet PDF文件第5页浏览型号IXGH36N60B3的Datasheet PDF文件第6页浏览型号IXGH36N60B3的Datasheet PDF文件第7页 
Advance Technical Information  
GenX3TM 600V IGBT  
VCES  
IC110  
= 600V  
= 36A  
IXGH36N60B3  
VCE(sat) 1.8V  
Medium-Speed Low-Vsat PT IGBT  
for 5 - 40kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
G
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
C
Tab  
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
92  
36  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
TC = 25°C, 1ms  
Tab = Collector  
200  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 5Ω  
ICM = 80  
A
Features  
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
z Optimized for Low Conduction and  
Switching Losses  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Square RBSOA  
z International Standard Package  
TJM  
Tstg  
-55 ... +150  
Advantages  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
25  
μA  
TJ = 125°C  
250 μA  
IGES  
VCE = 0V, VGE = ± 20V  
±100  
1.8  
nA  
V
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
DS100236(02/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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