5秒后页面跳转
IXGH39N60BD1 PDF预览

IXGH39N60BD1

更新时间: 2024-11-04 22:47:59
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
5页 155K
描述
HiPerFAST IGBT

IXGH39N60BD1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.71
Is Samacsys:N其他特性:FAST
外壳连接:COLLECTOR最大集电极电流 (IC):76 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):710 ns
标称接通时间 (ton):55 nsBase Number Matches:1

IXGH39N60BD1 数据手册

 浏览型号IXGH39N60BD1的Datasheet PDF文件第2页浏览型号IXGH39N60BD1的Datasheet PDF文件第3页浏览型号IXGH39N60BD1的Datasheet PDF文件第4页浏览型号IXGH39N60BD1的Datasheet PDF文件第5页 
HiPerFASTTM IGBT  
IXGH39N60B  
IXGH39N60BD1 IC25  
IXGT39N60B  
IXGT39N60BD1 tfi  
VCES  
= 600 V  
= 76 A  
VCE(sat) = 1.7 V  
= 200 ns  
Preliminarydata  
(D1)  
TO-268  
(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
76  
39  
152  
A
A
A
C (TAB)  
G
C
SSOA  
V
= 15 V, TVJ = 125°C, RG = 22 Ω  
I
= 76  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
200  
E
(RBSOA)  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
JEDEC TO-247 AD & TO-268  
High current handling capability  
Newest generation HDMOSTM process  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
z
z
Md  
Mounting torque (M3)  
TO-247  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
Applications  
z
PFC circuits  
Symbol  
TestConditions  
Characteristic Values  
z
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
z
DC servo and robot drives  
Min. Typ. Max.  
z
DC choppers  
z
BVCES  
VGE(th)  
ICES  
I
= 250 µA, VGE = 0 V  
39N60B  
600  
600  
V
Uninterruptible power supplies (UPS)  
ICC = 750 µA  
39N60BD1  
z
Switched-mode and resonant-mode  
power supplies  
I
= 250 µA, VCE = VGE  
39N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
39N60BD1 2.5  
Advantages  
VCE = 0.8 • VCES TJ = 25°C  
39N60B  
200 µA  
z
High power density  
VGE = 0 V  
TJ = 125°C  
TJ = 125°C  
39N60B  
1
3
mA  
mA  
z
Very fast switching speeds for high  
39N60BD1  
frequency applications  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = I90, VGE = 15 V  
±100 nA  
1.7  
VCE(sat)  
V
DS97548A(02/03)  
© 2003 IXYS All rights reserved  

IXGH39N60BD1 替代型号

型号 品牌 替代类型 描述 数据表
IXGH48N60B3D1 IXYS

类似代替

GenX3 600V IGBT with Diode

与IXGH39N60BD1相关器件

型号 品牌 获取价格 描述 数据表
IXGH39N60BS ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | TO-247SMD
IXGH39N60CD1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), N-Channel, TO-247AD,
IXGH40N120A2 IXYS

获取价格

High Voltage IGBT Low V
IXGH40N120A2 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGH40N120B2D1 IXYS

获取价格

High Voltage IGBTs w/Diode
IXGH40N120B2D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH40N120C3 IXYS

获取价格

GenX3 1200V IGBT
IXGH40N120C3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH40N120C3D1 IXYS

获取价格

GenX3 C3-Class IGBT w/Diode
IXGH40N120C3D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30