Preliminary Technical Information
TM
VCES = 1200V
IC110 = 40A
VCE(sat) ≤ 4.4V
tfi(typ) = 57ns
GenX3 1200V IGBT
IXGH40N120C3
High speed PT IGBTs
for 20 - 50 kHz switching
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1200
1200
V
V
TO-247 (IXGH)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
75
40
A
A
A
G
TAB
C
E
200
IA
EAS
TC = 25°C
TC = 25°C
30
500
A
mJ
G = Gate
C
= Collector
E = Emitter
TAB = Collector
SSOA
VGE= 15V, TJ = 125°C, RG = 3Ω
ICM = 80
A
(RBSOA)
Clamped inductive load @VCE≤ 1200V
PC
TC = 25°C
380
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
z International standard packages:
JEDEC TO-247AD
-55 ... +150
z IGBT and anti-parallel FRED in one
package
Md
Mounting torque
1.13 / 10
Nm/lb.in.
TL
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
z MOS Gate turn-on
- drive simplicity
TSOLD
Weight
6
g
Applications
z
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
z
z
z
z
Symbol
Test Conditions
Characteristic Values
Switch-mode and resonant-mode
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
power supplies
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
1200
3.0
V
V
5.0
ICES
VCE = VCES
VGE = 0V
75 μA
1.5 mA
TJ = 125°C
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
4.4
nA
VCE(sat)
IC
= 30A, VGE = 15V, Note 1
V
V
2.7
DS99997(06/08)
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