Datasheet > IXGH40N120C3D1

IXGH40N120C3D1

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	224K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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数据手册

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IXGH40N120C3D1 数据手册

Preliminary Technical Information

GenX3^TMC3-Class

IGBT w/Diode

V_CES= 1200V

I_C110= 40A

V_CE(sat)≤ 4.4V

t_fi(typ)= 57ns

IXGH40N120C3D1

High Speed PT IGBT

for 20 - 50 kHz Switching

Symbol

Test Conditions

Maximum Ratings

TO-247

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

TAB

I_C25

I_C110

I_F110

T_C= 25°C (Limited by Leads)

T_C= 110°C

I_CM

T_C= 25°C, 1ms

180

G = Gate

= Collector

E = Emitter

TAB = Collector

I_A

E_AS

T_C= 25°C

500

SSOA

(RBSOA)

V_GE= 15V, T_J= 125°C, R_G= 3Ω

Clamped inductive load

I_CM= 80

@V_CE<1200

Features

P_C

T_C= 25°C

380

^zOptimized for Low Conduction Losses

^zSquare RBSOA

T_J

T_JM

T_stg

-55 ... +150

150

°C

^zAvalanche Rated

-55 ... +150

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Package

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

Advantages

Weight

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min. Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

• Switch-Mode and Resonant-Mode

Power Supplies

V_CE= V_CES,V_GE= 0V

100 μA

±100 nA

T_J= 125°C

• Uninterruptible Power Supplies (UPS)

I_GES

V_CE= 0V, V_GE= ±20V

• DC Choppers

V_CE(sat)

I_C

= 30A, V_GE= 15V, Note 1

4.4

• AC Motor Drives

2.7

• DC Servo and Robot Drives

DS100115(02/09)

12 3 4 5 6 7 8

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