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IXGH40N30BD1 PDF预览

IXGH40N30BD1

更新时间: 2024-11-17 23:15:07
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IXYS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
4页 112K
描述
HiPerFASTTM IGBT

IXGH40N30BD1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
其他特性:FAST外壳连接:COLLECTOR
最大集电极电流 (IC):60 A集电极-发射极最大电压:300 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):230 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):90 ns
标称接通时间 (ton):25 nsBase Number Matches:1

IXGH40N30BD1 数据手册

 浏览型号IXGH40N30BD1的Datasheet PDF文件第2页浏览型号IXGH40N30BD1的Datasheet PDF文件第3页浏览型号IXGH40N30BD1的Datasheet PDF文件第4页 
HiPerFASTTM IGBT  
IXGH40N30BD1  
VCES = 300 V  
IC25 60 A  
VCE(sat) = 2.4 V  
=
tfi  
= 75 ns  
TO-247 AD  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
B)  
C
E
IC25  
IC90  
ICM  
TC = 25°C  
60  
40  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
160  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 mH  
ICM = 80  
@ 0.8 VCES  
A
PC  
TC = 25°C  
200  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Internationalstandardpackage  
JEDEC TO-247 AD  
TJM  
Tstg  
-55 ... +150  
• High current IGBT and paralled FRED  
in one package  
• Low leakage current FRED  
• Newest generation HDMOSTM  
process  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
• MOS Gate turn-on  
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
300  
2.5  
V
V
Advantages  
5
• High power density (two devices in  
onepackage)  
• Switching speed for high frequency  
applications  
• Easy to mount with 1 screw,  
(isolatedmountingscrewhole)  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
mA  
mA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
2.4  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97508C(6/98)  
1 - 4  

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