Datasheet > IXGH42N30C3

IXGH42N30C3

更新时间： 2024-11-05 11:14:11

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	174K
描述
GenX3 300V IGBT

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中文翻译

获取价格

数据手册

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IXGH42N30C3 数据手册

GenX3^TM300V IGBT

V_CES= 300V

I_C110= 42A

V_CE(sat)≤ 1.85V

t_{fi typ}= 65ns

IXGA42N30C3

IXGH42N30C3

IXGP42N30C3

High Speed PT IGBTs for

50-150kHz switching

TO-263 (IXGA)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

300

±20

±30

V_CGR

C (TAB)

V_GES

TO-247 (IXGH)

V_GEM

Transient

I_C110

I_CM

T_C= 110°C (chip capability)

T_C= 25°C, 1ms

250

I_A

T_C= 25°C

250

C (TAB)

E_AS

TO-220 (IXGP)

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 10Ω

Clamped inductive load @ ≤ 300V

I_CM= 84

(RBSOA)

P_C

T_C= 25°C

223

T_J

-55 ... +150

150

°C

C (TAB)

T_JM

T_stg

-55 ... +150

G = Gate

E = Emitter

= Collector

T_L

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

300

260

°C

TAB = Collector

T_SOLD

M_d

Mounting torque (TO-247)(TO-220)

1.13/10

Nm/lb.in.

Features

Weight

TO-263

TO-247

TO-220

2.5

6.0

3.0

^zOptimized for low switching losses

^zSquare RBSOA

^zHigh current handling capability

^zInternational standard packages

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

300

2.5

Typ.

Max.

^zHigh power density

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES

^zLow gate drive requirement

5.0

Applications

25 μA

500 μA

±100 nA

^zHigh Frequency Power Inverters

^zUPS

V_GE= 0V

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

^zMotor Drives

V_CE(sat)

I_C= 42A, V_GE= 15V, Note1

T_J= 125°C

1.54

1.85

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

DS99885B(07/08)

12 3 4 5 6

中文翻译

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